LATERAL MOS TRANSISTOR DEVICE

专利名称：LATERAL MOS TRANSISTOR DEVICE发明人：JOS, Hendrikus, Ferdinand, Franciscus申请号：EP98913987.0申请日：19980427公开号：EP0922302A2公开日：19990616

摘要：A lateral MOS transistor is described, in particular, though not exclusively, atransistor of the lateral DMOS type, in which the drain is provided with a weakly dopeddrain extension (8) to increase the breakdown voltage. This drain extension is alsopresent at the ends of the drain digits, so that the 'hard' drain (5) does not continue upto the edge (7) of the active region (6), but is separated therefrom by an interposedregion. These regions do not contribute to the transistor effect. To reduce parasitic inputcapacitances, which correspond to these non-active regions, the gate poly (9) is providedin the active portion of the transistor only and is replaced in the non-active portions bypoly (22) which is connected through to the source (4, 16). This poly acts as a gate which ispermanently at 0 V, so that leakage currents in the non-active regions are prevented.

申请人：Koninklijke Philips Electronics N.V.

地址：Groenewoudseweg 1 5621 BA Eindhoven NL

国籍：NL

代理机构：Houbiers, Ernest Emile Marie Gerlach, et al

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