VRSMIF(AV)MIF(RMS)IFSMVF0rF======52001978310624×103
0.940.284VAAAVmΩ
Rectifier Diode
5SDD 20F5000
Doc. No. 5SYA1162-01 Okt. 03
•Very low on-state losses
•Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetetive peak reverse voltage
Characteristic values
SymbolConditionsVRRM
f = 50 Hz, tp = 10ms, Tj = -40...160°Cf = 5 Hz, tp = 10ms, Tj = -40...160°C
min
typ
Value50005200max50
UnitVVUnitmA
Non - repetetive peak reverse voltageVRSMParameter
Max. (reverse) leakage current
SymbolConditionsIRRM
VRRM, Tj = 160°C
Mechanical data
Maximum rated values
1)
ParameterMounting forceAccelerationAcceleration
Characteristic values
SymbolConditionsFMaa
Device unclampedDevice clamped
min
20
typ22
max2450100
UnitkNm/sm/sUnitkgmmmmmmmm
22
ParameterWeight
Housing thicknessPole-piece diameterSurface creepage distance
SymbolConditionsmHDPDS
mintyp0.52647
max
33
Air strike distanceDa181) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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5SDD 20F5000
On-state
Maximum rated values
1)
Parameter
Max. average on-statecurrent
Max. peak non-repetitivesurge currentLimiting load integralMax. peak non-repetitivesurge currentLimiting load integral
Characteristic values
SymbolConditionsIF(AV)M
50 Hz, Half sine wave, TC = 85 °C
mintypmax
19783106
UnitAAAA2sAA2sUnitVVmΩ
Max. RMS on-state currentIF(RMS)
IFSMI2tIFSMI2t
SymbolConditionsVFV(T0)rT
IF = 4000 A, Tj = 160°CTj = 160°C
IT = 2827...8480 A
min
typ
tp = 8.3 ms, Tj = 160°C,VR = 0 V
tp = 10 ms, Tj = 160°C,VR = 0 V
24×102.88×1025.6×102.727×10
3
63
6
ParameterOn-state voltageThreshold voltageSlope resistance
max
2.10.940.284
Switching
Characteristic values
ParameterSymbolConditionsQrr
diF/dt = -30 A/µs, VR = 100 V
mintyp4500
max5500
UnitµAs
Recovery charge
IFRM = 1000 A, Tj = 160°C
Thermal
Maximum rated values
1)
ParameterOperating junctiontemperature range
Characteristic values
SymbolConditionsTvj
min-40-40min
typmax160160
Unit°C°CUnitK/kWK/kWK/kWK/kWK/kW
Storage temperature rangeTstgParameter
SymbolConditions
Double-side cooledAnode-side cooledCathode-side cooledDouble-side cooledSingle-side cooled
typmax15244048
Thermal resistance junctionRth(j-c)to case
Rth(j-c)ARth(j-c)C
Thermal resistance case toRth(c-h)heatsink
Rth(c-h)
Analytical function for transient thermal
impedance:
Zth(j-c)(t) = åRi(1-e-t/τ i)
i=1
23.8500.2040
iRi(K/kW)τi(s)
16.0600.6937
33.7800.0452
41.3200.0040
Fig. 1Transient thermal impedance junction-to-case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Okt. 03
page 2 of 6
n
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5SDD 20F5000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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IF ( A )10000900080007000600050004000300020001000001234VF ( V )10110t ( ms )2525 °C5SDD 20F5000
50IFSM ( kA )160 °C6IFSM 25°C òi2dt25°C i2dt (106 A2s)455,540160°C160 °C305354,543,5203152,52100Fig. 2Max. on-state characteristics.
PT ( W )5000Fig. 3Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
120° 180° DC PT ( W )500045004000350030002500200015001000500060° 450040003500300025002000150010005000040080012001600ψ = 30° 60° 90° 120° 180° 270° DC 2000240004008001200160020002400IFAV ( A )IFAV ( A )Fig. 4Forward power loss vs. average forward
current, sine waveform, f = 50 HzFig. 5Forward power loss vs. average forward
current, square waveform, f = 50 Hz
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TC ( °C )16015014013012011010090807060040080012005SDD 20F5000TC ( °C )170160150140130120110170DC 100908070DC 270° 180° 60° 1600180° 120° 20002400600400800ψ = 30° 120060° 90° 120° 160020002400IFAV ( A )IFAV ( A )Fig. 6Max. case temperature vs aver. forward
current, sine waveform, f = 50 Hz
10000Qrr ( µC )maxFig. 7Max. case temperature vs aver. forward
current, square waveform, f = 50 Hz
1000IrrM ( A )maxminmin1000100100110dIF/dt ( A/µs )10010110dIF/dt ( A/µs )100Fig. 8Reverse recovery charge vs. dIF/dt,
IF= 1000 A; Tj = Tjmax, limit valuesFig. 9Peak reverse recovery current vs. diF/dt,
IF = 1000 A; Tj = Tjmax, limit values
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Okt. 03
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5SDD 20F5000
Fig. 10Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland LtdSemiconductorsFabrikstrasse 3
CH-5600 Lenzburg, SwitzerlandTelephoneFaxEmailInternet
+41 (0)58 586 1419+41 (0)58 586 1306abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1162-01 Okt. 03
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