VP0808B/L/M, VP1008B/L/MP-Channel Enhancement-Mode MOSFET TransistorsProduct SummaryPart NumberVP0808BVP0808LVP0808MVP1008BVP1008LVP1008M–100–80V(BR)DSS Min (V)rDS(on) Max (W)5 @ VGS = –10 V5 @ VGS = –10 V5 @ VGS = –10 V5 @ VGS = –10 V5 @ VGS = –10 V5 @ VGS = –10 VVGS(th) (V)–2 to –4.5–2 to –4.5–2 to –4.5–2 to –4.5–2 to –4.5–2 to –4.5ID (A)–0.88–0.28–0.31–0.79–0.28–0.31FeaturesDDDDDHigh-Side SwitchingLow On-Resistance: 2.5 WModerate Threshold: –3.4 VFast Switching Speed: 40 nsLow Input Capacitance: 75 pFTO-205AD (TO-39)(Case Drain)S1BenefitsDDDDDEase in Driving SwitchesLow Offset (Error) VoltageLow-Voltage OperationHigh-Speed SwitchingEasily Driven Without BufferTO-226AA(TO-92)1ApplicationsDDrivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.DBattery Operated SystemsDPower Supply, Converter CircuitsDMotor ControlTO-237(Tab Drain)1SG23DTop ViewVP0808BVP1008BSGVP0808LVP1008L22VP0808MVP1008MD3D3GTop ViewTop ViewAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)ParameterDrain-Source VoltageGate-Source VoltageContinuous Drain Current(TJ = 150_C)Pulsed Drain CurrentaPowerDissipationPower DissipationTA= 25_CTA= 100_CTA= 25_CTA= 100_CSymbolVDSVGSIDIDMPDRthJARthJCTJ, TstgVP0808Bb–80\"20–0.88–0.53–36.252.520VP0808L–80\"30–0.28–0.17–30.80.32156VP0808M–80\"30–0.31–0.20–310.4125VP1008Bb–100\"20–0.79–0.53–36.252.520VP1008L–100\"30–0.28–0.17–30.80.32156VP1008M–100\"30–0.31–0.20–310.4125UnitVAW_C/W_CMaximum Junction-to-AmbientMaximum Junction-to-CaseOperating Junction andStorage Temperature Range–55 to 150Notesa.Pulse width limited by maximum junction temperature.b.Reference case for all temperature testing.Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218.SiliconixP-37655—Rev. B, 25-Jul-941VP0808B/L/M, VP1008B/L/MSpecificationsaLimitsVP0808B/L/MVP1008B/L/MParameterStaticDrain-Source Breakdown VoltageGate-Threshold VoltageGateBodyLeakageGate-Body LeakageSymbolTest ConditionsTypbMinMaxMinMaxUnitV(BR)DSSVGS(th)IGSSVGS = 0 V, ID = –10 mAVDS = VGS, ID = –1 mAVDS = 0 V, VGS = \"20 VTJ = 125_CVDS = –80 V, VGS = 0 V–110–3.4–80–2–4.5\"100\"500–10–500–100–2–4.5\"100\"500VnAZeroGateVoltage Drain CurrentZero Gate VoltageDrainCurrentIDSSTJ = 125_CVDS = –100 V, VGS = 0 VTJ = 125_C–10–500–22..43250.45200–1.158200–1.158mAOn-State Drain CurrentcDrainSourceOnResistancecDrain-Source On-ResistanceForward TransconductancecCommon SourceOutput ConductancecID(on)rDS(on)DS()gfsgosVDS = –15 V, VGS = –10 VVGS = –10 V, ID = –1 ATJ = 125_CVDS = –10 V, ID = –0.5 AVDS = –7.5 V, ID = –0.1 AAWmSDynamicInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceCissCossCrssVDS = –25 V25V, VVGS = 0 V0Vf = 1 MHz701815060251506025pFSwitchingdTurnOnTimeTurn-On Timetd(on)trtd(off)tfVDD=–25V,RL=47WID^–0.5–05A,AVGEN=-10VRG=25W11302020103030103030VPDV10nsTurn-OffTimeTurn-Off TimeNotesa.TA = 25_C unless otherwise noted.b.For DESIGN AID ONLY, not subject to production testing.c.Pulse test: PW v300 ms duty cycle v2%.d.Switching time is essentially independent of operating temperature.2SiliconixP-37655—Rev. B, 25-Jul-94VP0808B/L/M, VP1008B/L/MTypical Characteristics (25_C Unless Otherwise Noted)–2.0Ohmic Region CharacteristicsTJ = 25_CVGS = –10 VID– Drain Current (mA)–9 V–8 V–7 V–20Output Characteristics for Low Gate DriveTJ = 25_CVGS = –4.0 V–1.6ID– Drain Current (A)–16–1.2–12–3.8 V–0.8–6 V–0.4–5 V00–1–2–3–4 V–4–5–8–3.6 V–3.4 V00–0.4–0.8–1.2–1.6–2.0VDS – Drain-to-Source Voltage (V)–3.2 V–4VDS – Drain-to-Source Voltage (V)–0.5Transfer CharacteristicsTJ = –55_C125_CrDS(on)– On-Resistance (W)76On-Resistance vs. Gate-to-Source VoltageTJ = 25_CID= 0.1 A–0.4ID– Drain Current (A)VDS = –10 V–0.325_C3210.5 A1.0 A–0.2–0.100–2–4–6–8–10VGS – Gate-Source Voltage (V)00–4–8–12–16–20VGS – Gate-Source Voltage (V)10rDS(on)– Drain-Source On-Resistance (W)On-Resistance vs. Drain CurrentrDS(on)– Drain-Source On-Resistance (Normalized)2.001.751.501.251.000.750.50Normalized On-Resistancevs. Junction TemperatureVGS = –10 VID = 0.5 A8VGS = –10 V200–0.5–1.0–1.5–2.0–2.5–3.0ID – Drain Current (A)–50–103070110150TJ – Junction Temperature (_C)SiliconixP-37655—Rev. B, 25-Jul-943VP0808B/L/M, VP1008B/L/MTypical Characteristics (25_C Unless Otherwise Noted)–10VDS = –5 VID– Drain Current (mA)160–1TJ = 150_C25_C125_C–0.1–55_CC – Capacitance (pF)Threshold Region200VGS = 0 Vf = 1 MHzCapacitance120CissCoss40Crss80–0.01–1.00–1.5–2.0–2.5–3.0–3.5–4.0–4.50–10–20–30–40–50VGS – Gate-to-Source Voltage (V)VDS – Drain-to-Source Voltage (V)–15.0VGS– Gate-to-Source Voltage (V)–12.5–10.0ID = –0.5 AGate Charge100Drive Resistance Effects on Switchingtrt – Switching Time (ns)tftd(off)10td(on)VDS = –50 V–7.5–5.0–2.500–80 VVDD = –25 VRL = 50 WVGS = 0 to –10 VID = –500 mA1102050RG – Gate Resistance (W)100100200300400500Qg – Total Gate Charge (pC)1Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.10.050.020.01Single PulseNotes:PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 156_C/W3. TJM – TA = PDMZthJA(t)0.010.11101001 K10 Kt1 – Square Wave Pulse Duration (sec)4SiliconixP-37655—Rev. B, 25-Jul-94
