Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorPHE13007
GENERAL DESCRIPTION
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.
QUICK REFERENCE DATA
SYMBOLVCESMVCBOVCEOVEBOICICMPtotVCEsattf
PARAMETER
Collector-emitter voltage peak valueCollector-Base voltage (open emitter)Collector-emitter voltage (open base)Emitter-Base voltage (IB = 0)Collector current (DC)
Collector current peak valueTotal power dissipation
Collector-emitter saturation voltageFall time
CONDITIONSVBE = 0 V
TYP.-------0.3540
MAX.7007004009816802.0120
UNITVVVVAAWVns
Tmb ≤ 25 ˚C
IC = 5.0 A;IB = 1.0 AIC = 5 A; IB1 = 1 A
PINNING - TO220AB
PIN123tabbasecollectoremittercollectorDESCRIPTIONPIN CONFIGURATION
tabSYMBOL
cb123eLIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOLVCESMVCEOVCBOVEBOICICMIBIBMPtotTstgTj
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)Collector to base voltage (open emitter)Emitter-Base voltage (IB = 0)Collector current (DC)
Collector current peak valueBase current (DC)
Base current peak valueTotal power dissipationStorage temperatureJunction temperature
CONDITIONSVBE = 0 V
MIN.----------65-MAX.70040070098164880150150
UNITVVVVAAAAW˚C˚C
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOLRth j-mbRth j-a
PARAMETER
Junction to mounting baseJunction to ambient
in free airCONDITIONS
TYP.-60
MAX.1.56-UNITK/WK/W
February 19991Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorPHE13007
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specifiedSYMBOLICESICESIEBO
VCEOsustVCEsatVCEsatVCEsatVBEsatVBEsatVBEsathFEhFEsat
PARAMETER
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltageCollector-emitter saturation voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmaxVBE = 0 V; VCE = VCESMmax;Tj = 125 ˚C
VEB = 9 V; IC = 0 AIB = 0 A; IC = 10 mA;L = 25 mH
IC = 2.0 A;IB = 0.4 AIC = 5.0 A;IB = 1.0 AIC = 5.0 A;IB = 1.0 A(TC = 100˚C)IC = 2.0 A;IB = 0.4 AIC = 5.0 A;IB = 1.0 AIC = 5.0 A;IB = 1.0 A(TC = 100˚C)IC = 2.0 A; VCE = 5 VIC = 5.0 A; VCE = 5 V
MIN.---400------85
TYP.----0.150.350.510.921.051.00179
MAX.0.21.01.0-1.02.03.01.21.61.54030
UNITmAmAmAVVVVVVV
Base-emitter saturation voltage
DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specifiedSYMBOLtstftstftstf
PARAMETER
Switching times (resistive load)Turn-off storage timeTurn-off fall time
Switching times (inductive load)Turn-off storage timeTurn-off fall time
Switching times (inductive load)Turn-off storage timeTurn-off fall time
CONDITIONS
ICon = 5 A; IBon = -IBoff = 1 A;RL = 75 ohms; VBB2 = 4 V;ICon = 5 A; IBon = 1 A; LB = 1 µH;-VBB = 5 V
ICon = 5 A; IBon = 1 A; LB = 1 µH;-VBB = 5 V; Tj = 100 ˚C
TYP.1.80.31.2401.6100
MAX.3.00.72.01203.0200
UNITµsµsµsnsµsns
1 Measured with half sine-wave voltage (curve tracer).
February 19992Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorPHE13007
+ 50v100-200RIC90 %ICon90 %10 %HorizontalOscilloscopeVertical300R30-60 Hz6V1RIBtstontoffIBon10 %tr30ns-IBofftfFig.1. Test circuit for VCEOsust.Fig.4. Switching times waveforms with resistive load.IC / mAVCC250LCIBon100100LBT.U.T.-VBBVCE / VminVCEOsustFig.2. Oscilloscope display for VCEOsust.Fig.5. Test circuit inductive load.VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uHVCCICon90 %ICRLVIM0tpT-IBoffRB10 %T.U.T.IBtstoffIBontfttFig.3. Test circuit resistive load. VIM = -6 to +8 VVCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.RB and RL calculated from ICon and IBon requirements.Fig.6. Switching times waveforms with inductive load.February 19993Rev 1.000
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Philips SemiconductorsProduct specification Silicon Diffused Power TransistorPHE13007 120 110 100 90 80 70 60 50 40 30 20 10 0 PD%Normalised Power DeratingVCEsat/V2.01.6IC=1A1.22A3A4A0.80.4020406080Tmb / C1001201400.00.010.10IB/A1.0010.00Fig.7. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C = f (Tmb)Fig.10. Collector-Emitter saturation voltage.Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.HFE50VBESAT/V1.430Tj=100C1.32025C1.2151.1-40C1010.95-40C0.80.7225CTj=100CVCE=1V0.60.010.050.10.3IC/A1235100.50.10.51IC/A2510Fig.8. Typical DC current gain. hFE = f(IC)parameter VCEFig.11. Base-Emitter saturation voltage.Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.HFE50VCESAT/V0.630Tj=100C0.5Tj=100C2025C0.415-40C100.30.225C5-40CVCE=5V0.120.010.050.10.3IC/A12351000.20.40.61IC/A256Fig.9. Typical DC current gain. hFE = f(IC)parameter VCEFig.12. Collector-Emitter saturation voltage.Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.February 19994Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorPHE13007
10Zth / (K/W)IC/A1110981D=0.50.20.10.050.0207650.1PDtpD = tp-5V4-3VT3T0.011E-061E-041E-02t / st1E+002-1V100100200300400500VCEclamp/V600700800Fig.13. Transient thermal impedance.Zth j-mb = f(t); parameter D = tp/TFig.15. Reverse bias safe operating area (Tj < Tjmax)for -VBE = 5V,3V & 1V.VCCLCIBonVCLLBT.U.T.-VBBFig.14. Test circuit for reverse bias safe operatingarea.Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V;LB = 1µH; LC = 200µH.February 19995Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorPHE13007
MECHANICAL DATA
Dimensions in mmNet Mass: 2 g4,5max10,3max3,72,81,35,9min15,8max3,0 maxnot tinned3,013,5min1,3max123(2x)2,54 2,540,9 max (3x)0,62,4Fig.16. TO220AB; pin 2 connected to mounting base.Notes1. Refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8\".
February 19996Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorPHE13007
DEFINITIONS
Data sheet statusObjective specificationProduct specificationLimiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information
Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
February 19997Rev 1.000
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