SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
High Power Density Surface Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
•Low profile package
•Ideal for automated placement •Glass passivated chip junction
•Available in uni-directional and bi-directional •Excellent clamping capability •Very fast response time
•Low incremental surge resistance
•Meets MSL level 1, per J-STD-020, LF maximumpeak of 260 °C
•Solder dip 260 °C, 40 s •Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/ECTYPICAL APPLICATIONS
Use in sensitive electronics protection against voltagetransients induced by inductive load switching andlighting on ICs, MOSFET, signal lines of sensor unitsfor consumer, computer, industrial, automotive andtelecommunication.
MECHANICAL DATACase: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammabilityrating
Base P/N-E3 - RoHS compliant, commercial gradeBase P/NHE3 - RoHS compliant, high reliability/automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable perJ-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color banddenotes cathode end, no marking on bi-directionaltypes
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
VWM
PPPM (uni-directional)PPPM (bi-directional)IFSM (uni-directional only)
TJ max.
5.0 V to 40 V1000 W800 W100 A150 °C
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µswaveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2(2) Mounted on 0.2 x 0.2\" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88422Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comwww.vishay.com
1
uni-directionalbi-directional
SYMBOL PPPM IPPM TJ, TSTG
VALUE1000 800See next table - 55 to + 150
UNIT W A
A °C
IFSM 100元器件交易网www.cecb2b.com
Vishay General Semiconductor
UNI-DIRECTIONAL
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
DEVICE TYPEDEVICE MARKING CODE
BREAKDOWN VOLTAGE VBR AT IT (V) (1)IPPM (A) (2)MIN.MAX.SMB10J5.0 1AD 6.407.82105.01000104.29.6SMB10J5.0A 1AE 6.407.07105.01000108.79.2SMB10J6.0 1AF 6.678.15106.0100087.711.4SMB10J6.0A 1AG 6.677.37106.0100097.110.3SMB10J6.5 1AH 7.22 8.82 10 6.5 500 81.3 12.3 SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 .3 11.2 SMB10J7.0 1AL 7.78 9.51 10 7.0 200 75.2 13.3 SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0 SMB10J7.5 1AN 8.33 10.2 1.0 7.5 100 69.9 14.3 SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9 SMB10J8.0 1AQ 8. 10.9 1.0 8.0 50 66.7 15.0 SMB10J8.0A 1AR 8. 9.83 1.0 8.0 50 73.5 13.6 SMB10J8.5 1AS 9.44 11.5 1.0 8.5 20 62.9 15.9 SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4 SMB10J9.0 1AU 10.0 12.2 1.0 9.0 10 59.2 16.9 SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 .9 15.4 SMB10J10 1AW 11.1 13.6 1.0 10 5.0 53.2 18.8 SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0 SMB10J11 1AY 12.2 14.9 1.0 11 5.0 49.8 20.1 SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 .9 18.2 SMB10J12 1BD 13.3 16.3 1.0 12 5.0 45.5 22.0 SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9 SMB10J13 1BF 14.4 17.6 1.0 13 1.0 42.0 23.8 SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5 SMB10J14 1BH 15.6 19.1 1.0 14 1.0 38.8 25.8 SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2 SMB10J15 1BL 16.7 20.4 1.0 15 1.0 37.2 26.9 SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4 SMB10J16 1BN 17.8 21.8 1.0 16 1.0 34.7 28.8 SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0 SMB10J17 1BQ 18.9 23.1 1.0 17 1.0 32.8 30.5 SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6 SMB10J18 1BS 20.0 24.4 1.0 18 1.0 31.1 32.2 SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2 SMB10J20 1BU 22.2 27.1 1.0 20 1.0 27.9 35.8 SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4 SMB10J22 1BW 24.4 29.8 1.0 22 1.0 25.4 39.4 SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5 SMB10J24 1BY 26.7 32.6 1.0 24 1.0 23.3 43.0 SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9 SMB10J26 1CD 28.9 35.3 1.0 26 1.0 21.5 46.6 SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1 SMB10J28 1CF 31.1 38.0 1.0 28 1.0 20.0 50.0 SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4 SMB10J30 1CH 33.3 40.7 1.0 30 1.0 18.7 53.5 SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4 SMB10J33 1CL 36.7 44.9 1.0 33 1.0 16.9 59.0 SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3 SMB10J36 1CN 40.0 48.9 1.0 36 1.0 15.6 .3 SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1 SMB10J40 1CQ 44.4 .3 1.0 40 1.0 14.0 71.4 SMB10J40A 1CR 44.4 49.1 1.0 40 1.0 15.5 .5 Notes:
(1)Pulse test: tp ≤ 50 ms
(2)Surge current waveform per Fig. 3 and derate per Fig. 2(3)All terms and symbols are consistent with ANSI/IEEE C62.35(4)VF = 3.5 V at IF = 50 A (uni-directional only)www.vishay.com2
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Document Number: 88422
Revision: 22-Oct-08
TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V)MAXIMUM REVERSE LEAKAGEAT VWM ID (µA)MAXIMUM PEAK PULSE SURGE CURRENTMAXIMUM CLAMPING VOLTAGE AT IPPM VC (V)元器件交易网www.cecb2b.com
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
DEVICE TYPEDEVICE MARKING CODE
BREAKDOWN VOLTAGE VBR (1) (V) TEST CURRENT AT IT (mA) STAND-OFF VOLTAGE VWM (V)MAXIMUM REVERSE LEAKAGEAT VWM ID (µA) (3)5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 40 MAXIMUM PEAK PULSE SURGE CURRENTIPPM (A) (2)MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V)
MIN.MAX.SMB8J5.0C 1AD 6.40 7.82 10 SMB8J5.0CA 1AE 6.40 7.25 10 SMB8J6.0C 1AF 6.67 8.15 10 SMB8J6.0CA 1AG 6.67 7.37 10 SMB8J6.5C 1AH 7.22 8.82 10 SMB8J6.5CA 1AK 7.22 7.98 10 SMB8J7.0C 1AL 7.78 9.51 10 SMB8J7.0CA 1AM 7.78 8.60 10 SMB8J7.5C 1AN 8.33 10.2 1.0 SMB8J7.5CA 1AP 8.33 9.21 1.0 SMB8J8.0C 1AQ 8. 10.9 1.0 SMB8J8.0CA 1AR 8. 9.83 1.0 SMB8J8.5C 1AS 9.44 11.5 1.0 SMB8J8.5CA 1AT 9.44 10.4 1.0 SMB8J9.0C 1AU 10.0 12.2 1.0 SMB8J9.0CA 1AV 10.0 11.1 1.0 SMB8J10C 1AW 11.1 13.6 1.0 SMB8J10CA 1AX 11.1 12.3 1.0 SMB8J11C 1AY 12.2 14.9 1.0 SMB8J11CA 1AZ 12.2 13.5 1.0 SMB8J12C 1BD 13.3 16.3 1.0 SMB8J12CA 1BE 13.3 14.7 1.0 SMB8J13C 1BF 14.4 17.6 1.0 SMB8J13CA 1BG 14.4 15.9 1.0 SMB8J14C 1BH 15.6 19.1 1.0 SMB8J14CA 1BK 15.6 17.2 1.0 SMB8J15C 1BL 16.7 20.4 1.0 SMB8J15CA 1BM 16.7 18.5 1.0 SMB8J16C 1BN 17.8 21.8 1.0 SMB8J16CA 1BP 17.8 19.7 1.0 SMB8J17C 1BQ 18.9 23.1 1.0 SMB8J17CA 1BR 18.9 20.9 1.0 SMB8J18C 1BS 20.0 24.4 1.0 SMB8J18CA 1BT 20.0 22.1 1.0 SMB8J20C 1BU 22.2 27.1 1.0 SMB8J20CA 1BV 22.2 24.5 1.0 SMB8J22C 1BW 24.4 29.8 1.0 SMB8J22CA 1BX 24.4 26.9 1.0 SMB8J24C 1BY 26.7 32.6 1.0 SMB8J24CA 1BZ 26.7 29.5 1.0 SMB8J26C 1CD 28.9 35.3 1.0 SMB8J26CA 1CE 28.9 31.9 1.0 SMB8J28C 1CF 31.1 38.0 1.0 SMB8J28CA 1CG 31.1 34.4 1.0 SMB8J30C 1CH 33.3 40.7 1.0 SMB8J30CA 1CK 33.3 36.8 1.0 SMB8J33C 1CL 36.7 44.9 1.0 SMB8J33CA 1CM 36.7 40.6 1.0 SMB8J36C 1CN 40.0 48.9 1.0 SMB8J36CA 1CP 40.0 44.2 1.0 SMB8J40C 1CQ 44.4 .3 1.0 SMB8J40CA 1CR 44.4 49.1 1.0 Notes:
(1)Pulse test: tp ≤ 50 ms
(2)Surge current waveform per Fig. 3 and derate per Fig. 2(3)All terms and symbols are consistent with ANSI/IEEE C62.35
2000 83.3 9.6 2000 87.0 9.2 2000 70.2 11.4 2000 77.7 10.3 1000 65.0 12.3 1000 71.4 11.2 400 60.2 13.3 400 66.7 12.0 200 55.9 14.3 200 62.0 12.9 100 53.3 15.0 100 58.8 13.6 40 50.3 15.9 40 55.6 14.4 20 47.3 16.9 20 51.9 15.4 10 42.6 18.8 10 47.1 17.0 5.0 39.8 20.1 5.0 44.0 18.2 5.0 36.4 22.0 5.0 40.2 19.9 1.0 33.6 23.8 1.0 37.2 21.5 1.0 31.0 25.8 1.0 34.5 23.2 1.0 29.7 26.9 1.0 32.8 24.4 1.0 27.8 28.8 1.0 30.8 26.0 1.0 26.2 30.5 1.0 29.0 27.6 1.0 24.8 32.2 1.0 27.4 29.2 1.0 22.3 35.8 1.0 24.7 32.4 1.0 20.3 39.4 1.0 22.5 35.5 1.0 18.6 43.0 1.0 20.6 38.9 1.0 17.2 46.6 1.0 19.0 42.1 1.0 16.0 50.0 1.0 17.6 45.4 1.0 15.0 53.5 1.0 16.5 48.4 1.0 13.6 59.0 1.0 15.0 53.3 1.0 12.4 .3 1.0 13.8 58.1 1.0 11.2 71.4 1.0 12.4 .5
Document Number: 88422Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comwww.vishay.com
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Vishay General Semiconductor
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead Note:
(1) Mounted on minimum recommended pad layout
SYMBOL
VALUE
UNIT
°C/W °C/W RθJA 72RθJL 20ORDERING INFORMATION (Example)
PREFERRED P/NSMB10J5.0A-E3/52SMB10J5.0A-E3/5BSMB10J5.0AHE3/52 (1)SMB10J5.0AHE3/5B (1)
UNIT WEIGHT (g)
0.1060.1060.1060.106
PREFERRED PACKAGE CODE
525B525B
BASE QUANTITY
75032007503200
DELIVERY MODE
7\" diameter plastic tape and reel13\" diameter plastic tape and reel7\" diameter plastic tape and reel13\" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 150IPPM - Peak Pulse Current, % IRSMPPPM - Peak Pulse Power (kW)tr = 10 µsPeak ValueIPPM10 SMB10J5.0 -SMB10J40A100TJ = 25 °CPulse Width (td)is defined as the Pointwhere the Peak Currentdecays to 50 % of IPPMHalf Value -IPPIPPM25010/1000 µs Waveformas defined by R.E.A.td001.02.03.04.01 0.2 x 0.2\" (5.0 x 5.0 mm)Copper Pad AreasSMB8J5.0C -SMB8J40CA1.0 ms 10 ms 0.1 0.1 µs 1.0 µs 10 µs 100 µs td - Pulse Width (s)t - Time (ms)Figure1. Peak Pulse Power Rating CurveFigure3. Pulse Waveform
Peak Pulse Power (PPP) or Current (IPP)Derating in Percentage, %10010 00075CJ - Junction Capacitance (pF)Measured atZero Bias10005010025VR, Measured atStand-OffVoltage VWMTJ = 25 °Cf = 1.0 MHzVsig = 50 mVp-p10100200Bi-Directional00255075100125150175200101TJ - Initial Temperature (°C)VWM - Reverse Stand-Off Voltage (V)Figure2. Pulse Power or Current vs. Initial Junction TemperatureFigure4. Typical Junction Capacitance
www.vishay.com4For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comDocument Number: 88422
Revision: 22-Oct-08
元器件交易网www.cecb2b.com
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
100200Transient Thermal Impedance (°C/W)Peak Forward Surge Current (A)8.3 ms Single Half Sine-WaveUni-Directional Only100101.00.010.1110100100010110100tp - Pulse Duration (s)Number of Cycles at 60 HzFigure5. Typical Transient Thermal Impedance
Figure6. Maximum Non-Repetitive Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)Cathode Band0.085 (2.159)MAX.Mounting Pad Layout0.086 (2.20)0.077 (1.95)0.155 (3.94)0.130 (3.30)0.086 (2.18)MIN.0.180 (4.57)0.160 (4.06)0.012 (0.305)0.006 (0.152)0.060 (1.52)MIN.0.220 REF.0.096 (2.44)0.084 (2.13)0.060 (1.52)0.030 (0.76)0.008 (0.2)0 (0)0.220 (5.59)0.205 (5.21)
Document Number: 88422Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comwww.vishay.com
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元器件交易网www.cecb2b.com
Legal Disclaimer Notice
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Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
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Document Number: 91000Revision: 18-Jul-08
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