Nitride-based transistors and methods of fabricati

专利名称：Nitride-based transistors and methods of

fabrication thereof using non-etched contactrecesses

发明人：Adam William Saxler,Richard Peter

Smith,Scott T. Sheppard

申请号：US11221343申请日：20050907公开号：US07550784B2公开日：20090623

专利附图：

摘要：Contacts for a nitride based transistor and methods of fabricating such contacts

provide a recess through a regrowth process. The contacts are formed in the recess. Theregrowth process includes fabricating a first cap layer comprising a Group III-nitridesemiconductor material. A mask is fabricated and patterned on the first cap layer. Thepattern of the mask corresponds to the pattern of the recesses for the contacts. Asecond cap layer comprising a Group III-nitride semiconductor material is selectivelyfabricated (e.g. grown) on the first cap layer utilizing the patterned mask. Additionallayers may also be formed on the second cap layer. The mask may be removed toprovide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es).Alternatively, the mask may comprise a conductive material upon which a contact may beformed, and may not require removal.

申请人：Adam William Saxler,Richard Peter Smith,Scott T. Sheppard

地址：Durham NC US,Carrboro NC US,Chapel Hill NC US

国籍：US,US,US

代理机构：Myers Bigel Sibley & Sajovec, PA

代理人：Robert S. Pyles

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